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Description
DIODES INC. - ZTX857 - Bipolar (BJT) Single Transistor, NPN, 300 V, 3 A, 1.2 W, E-Line, Through Hole
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 300V
- Transition Frequency ft: 80MHz
- Power Dissipation Pd: 1.2W
- DC Collector Current: 3A
- DC Current Gain hFE: 200hFE
- Transistor Case Style: E-Line
- No. of Pins: 3Pins
- Operating Temperature Max: 200°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: Lead (15-Jan-2019)
- Collector Emitter Saturation Voltage Vce(on): 250mV
- Continuous Collector Current Ic Max: 3A
- Current Ic @ Vce Sat: 3A
- Current Ic Continuous a Max: 3A
- Current Ic hFE: 1A
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Typ: 80MHz
- Hfe Min: 100
- No. of Transistors: 1
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +200°C
- Power Dissipation Ptot Max: 1.2W
- Voltage Vcbo: 330V
