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TW083N65C,S1F(S - Silicon Carbide MOSFET, Single, N Channel, 30 A, 650 V, 0.113 ohm, TO-247 - TOSHIBA
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TW083N65C,S1F(S - Silicon Carbide MOSFET, Single, N Channel, 30 A, 650 V, 0.113 ohm, TO-247 - TOSHIBA

TW083N65C,S1F(S - Silicon Carbide MOSFET, Single, N Channel, 30 A, 650 V, 0.113 ohm, TO-247 - TOSHIBA

TOSHIBASKU: TW083N65C,S1F(S Order code: 4049754
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€24,18

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Description

  • Channel Type: N Channel
  • Continuous Drain Current Id: 30A
  • Drain Source On State Resistance: 0.113ohm
  • Drain Source Voltage Vds: 650V
  • Gate Source Threshold Voltage Max: 5V
  • MOSFET Module Configuration: Single
  • No. of Pins: 3Pins
  • Operating Temperature Max: 175°C
  • Power Dissipation: 111W
  • Product Range: PW Series
  • Rds(on) Test Voltage: 18V
  • Transistor Case Style: TO-247

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