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Description
ONSEMI - TIP112G - Bipolar (BJT) Single Transistor, NPN, 100 V, 2 A, 50 W, TO-220AB, Through Hole
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 100V
- Transition Frequency ft: -
- Power Dissipation Pd: 50W
- DC Collector Current: 2A
- DC Current Gain hFE: 500hFE
- Transistor Case Style: TO-220AB
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: Lead (27-Jun-2018)