STB26N60M2 - Power MOSFET, N Channel, 600 V, 20 A, 0.14 ohm, TO-263 (D2PAK), Surface Mount - STMICROELECTRONICS

STMICROELECTRONICSSKU: STB26N60M2 Order code: 3132712

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Description

  • Channel Type: N Channel
  • Continuous Drain Current Id: 20A
  • Drain Source On State Resistance: 0.14ohm
  • Drain Source Voltage Vds: 600V
  • Gate Source Threshold Voltage Max: 3V
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 3Pins
  • On Resistance Rds(on): 0.14ohm
  • Operating Temperature Max: 150°C
  • Power Dissipation: 169W
  • Power Dissipation Pd: 169W
  • Product Range: MDmesh M2
  • Qualification: -
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: TO-263 (D2PAK)
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel

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