Description
VISHAY - SQS944ENW-T1_GE3 - Dual MOSFET, N Channel, 40 V, 6 A, 0.019 ohm, PowerPAK 1212, Surface Mount
- Transistor Polarity: Dual N Channel
- Continuous Drain Current Id: 6A
- Drain Source Voltage Vds: 40V
- On Resistance Rds(on): 0.019ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 2V
- Power Dissipation Pd: 27.8W
- Transistor Case Style: PowerPAK 1212
- No. of Pins: 8Pins
- Operating Temperature Max: 175°C
- Product Range: TrenchFET Series
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)