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Description
VISHAY - SQJQ100E-T1_GE3 - Power MOSFET, N Channel, 40 V, 200 A, 900 µohm, PowerPAK, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 200A
- Drain Source Voltage Vds: 40V
- On Resistance Rds(on): 900µohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 2V
- Power Dissipation Pd: 136W
- Transistor Case Style: PowerPAK
- No. of Pins: 8Pins
- Operating Temperature Max: 175°C
- Product Range: TrenchFET Series
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (12-Jan-2017)