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Description
- Collector Emitter Saturation Voltage: 1.2kV
- Collector Emitter Saturation Voltage Vce(on): 1.2kV
- Collector Emitter Voltage Max: 940mV
- Collector Emitter Voltage V(br)ceo: 940mV
- Continuous Collector Current: 598A
- DC Collector Current: 598A
- IGBT Configuration: Single
- IGBT Technology: V-IGBT
- IGBT Termination: Stud
- Junction Temperature Tj Max: 175°C
- Operating Temperature Max: 175°C
- Power Dissipation: -
- Power Dissipation Pd: -
- Product Range: -
- Transistor Case Style: SEMITRANS 4
- Transistor Mounting: Panel