Description
VISHAY - SIZF914DT-T1-GE3 - Dual MOSFET, N Channel + Schottky, 25 V, 60 A, 600 µohm, PowerPAIR, Surface Mount
- Transistor Polarity: Dual N Channel + Schottky
- Continuous Drain Current Id: 60A
- Drain Source Voltage Vds: 25V
- On Resistance Rds(on): 0.0006ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 2.2V
- Power Dissipation Pd: 60W
- Transistor Case Style: PowerPAIR
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Gen IV, SkyFET Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)