Description
VISHAY - SISS67DN-T1-GE3 - Power MOSFET, P Channel, 30 V, 60 A, 0.0046 ohm, PowerPAK 1212, Surface Mount
- Transistor Polarity: P Channel
- Continuous Drain Current Id: -60A
- Drain Source Voltage Vds: -30V
- On Resistance Rds(on): 0.0046ohm
- Rds(on) Test Voltage Vgs: -10V
- Threshold Voltage Vgs: -2.5V
- Power Dissipation Pd: 65.8W
- Transistor Case Style: PowerPAK 1212
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Gen III Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)