Description
VISHAY - SISH407DN-T1-GE3 - Power MOSFET, P Channel, 20 V, 25 A, 0.0082 ohm, PowerPAK 1212, Surface Mount
- Transistor Polarity: P Channel
- Continuous Drain Current Id: -25A
- Drain Source Voltage Vds: -20V
- On Resistance Rds(on): 0.0082ohm
- Rds(on) Test Voltage Vgs: -4.5V
- Threshold Voltage Vgs: -1V
- Power Dissipation Pd: 33W
- Transistor Case Style: PowerPAK 1212
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2019)