Description
VISHAY - SIS903DN-T1-GE3 - Dual MOSFET, P Channel, 20 V, 6 A, 0.0167 ohm, PowerPAK 1212, Surface Mount
- Transistor Polarity: Dual P Channel
- Continuous Drain Current Id: -6A
- Drain Source Voltage Vds: -20V
- On Resistance Rds(on): 0.0167ohm
- Rds(on) Test Voltage Vgs: -4.5V
- Threshold Voltage Vgs: -1V
- Power Dissipation Pd: 23W
- Transistor Case Style: PowerPAK 1212
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Gen III Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)