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Description
VISHAY - SIHD9N60E-GE3 - Power MOSFET, N Channel, 600 V, 9 A, 0.32 ohm, TO-252 (DPAK), Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 9A
- Drain Source Voltage Vds: 600V
- On Resistance Rds(on): 0.32ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 4.5V
- Power Dissipation Pd: 78W
- Transistor Case Style: TO-252
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: E Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (12-Jan-2017)