Description
VISHAY - SIHD1K4N60E-GE3 - Power MOSFET, N Channel, 600 V, 4.2 A, 1.3 ohm, TO-252 (DPAK), Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 4.2A
- Drain Source Voltage Vds: 600V
- On Resistance Rds(on): 1.3ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 5V
- Power Dissipation Pd: 63W
- Transistor Case Style: TO-252
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: E Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2019)