Description
VISHAY - SIHB4N80E-GE3 - Power MOSFET, N Channel, 800 V, 4.3 A, 1.1 ohm, TO-263 (D2PAK), Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 4.3A
- Drain Source Voltage Vds: 800V
- On Resistance Rds(on): 1.1ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 4V
- Power Dissipation Pd: 69W
- Transistor Case Style: TO-263
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: E Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)