SIHB30N60E-GE3 MOSFET, N Ch, 600v, 29A, D2PAK Vishay

VISHAYSKU: SIHB30N60E-GE3 Order code: 2079779

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Description

VISHAY - SIHB30N60E-GE3 - Power MOSFET, N Channel, 600 V, 29 A, 0.104 ohm, TO-263 (D2PAK), Surface Mount

  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 29A
  • Drain Source Voltage Vds: 600V
  • On Resistance Rds(on): 0.104ohm
  • Rds(on) Test Voltage Vgs: 10V
  • Threshold Voltage Vgs: 2V
  • Power Dissipation Pd: 250W
  • Transistor Case Style: TO-263
  • No. of Pins: 3Pins
  • Operating Temperature Max: 150°C
  • Product Range: E Series
  • Automotive Qualification Standard: -
  • MSL: MSL 1 - Unlimited
  • Operating Temperature Min: -55°C
  • Operating Temperature Range: -55°C to +150°C
  • Voltage Vgs Max: 30V

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