SIHB20N50E-GE3 MOSFET, N CHANNEL, 500V, 19A, TO-263-3 VISHAY

VISHAY - SIHB20N50E-GE3 - Power MOSFET, N Channel, 500 V, 19 A, 0.16 ohm, TO-263 (D2PAK), Surface Mount

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 19A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 0.16ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs: 4V
• Power Dissipation Pd: 179W
• Transistor Case Style: TO-263
• No. of Pins: 3Pins
• Operating Temperature Max: 150°C
• Product Range: E Series
• Automotive Qualification Standard: -
• MSL: MSL 1 - Unlimited