SIHB12N60E-GE3 MOSFET, N-Ch, 600v, 12A, TO-263 Vishay

VISHAYSKU: SIHB12N60E-GE3 Order code: 2364071

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Sale price€5,09

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In stock (87 units), ready to be shipped

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Description

VISHAY - SIHB12N60E-GE3 - Power MOSFET, N Channel, 600 V, 12 A, 0.32 ohm, TO-263 (D2PAK), Surface Mount

  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 12A
  • Drain Source Voltage Vds: 600V
  • On Resistance Rds(on): 0.32ohm
  • Rds(on) Test Voltage Vgs: 10V
  • Threshold Voltage Vgs: 2V
  • Power Dissipation Pd: 147W
  • Transistor Case Style: TO-263
  • No. of Pins: 3Pins
  • Operating Temperature Max: 150°C
  • Product Range: -
  • Automotive Qualification Standard: -
  • MSL: MSL 1 - Unlimited
  • Operating Temperature Min: -55°C

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