SIHB11N80E-GE3 MOSFET, N-Ch, 800V, 12A, 150DEG C, 179W Vishay

VISHAYSKU: SIHB11N80E-GE3 Order code: 2932918

Price:
Sale price€5,09

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Stock:
In stock (1964 units), ready to be shipped

Description

VISHAY - SIHB11N80E-GE3 - Power MOSFET, N Channel, 800 V, 12 A, 0.38 ohm, TO-263 (D2PAK), Surface Mount

  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 12A
  • Drain Source Voltage Vds: 800V
  • On Resistance Rds(on): 0.38ohm
  • Rds(on) Test Voltage Vgs: 10V
  • Threshold Voltage Vgs: 4V
  • Power Dissipation Pd: 179W
  • Transistor Case Style: TO-263
  • No. of Pins: 3Pins
  • Operating Temperature Max: 150°C
  • Product Range: E Series
  • Automotive Qualification Standard: -
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (27-Jun-2018)

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