SIDR610DP-T1-GE3 MOSFET, N-CH, 200V, 39.6A, 125W VISHAY

VISHAYSKU: SIDR610DP-T1-GE3 Order code: 3014141

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Sale price€8,44

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In stock (14 units), ready to be shipped

Description

VISHAY - SIDR610DP-T1-GE3 - Power MOSFET, N Channel, 200 V, 39.6 A, 0.0239 ohm, PowerPAK SO, Surface Mount

  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 39.6A
  • Drain Source Voltage Vds: 200V
  • On Resistance Rds(on): 0.0239ohm
  • Rds(on) Test Voltage Vgs: 10V
  • Threshold Voltage Vgs: 4V
  • Power Dissipation Pd: 125W
  • Transistor Case Style: PowerPAK SO
  • No. of Pins: 8Pins
  • Operating Temperature Max: 150°C
  • Product Range: TrenchFET Series
  • Automotive Qualification Standard: -
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (15-Jan-2019)

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