Description
VISHAY - SIDR608DP-T1-RE3 - Power MOSFET, N Channel, 45 V, 208 A, 0.001 ohm, PowerPAK SO, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 208A
- Drain Source Voltage Vds: 45V
- On Resistance Rds(on): 0.001ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 2.3V
- Power Dissipation Pd: 104W
- Transistor Case Style: PowerPAK SO
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2019)