Description
VISHAY - SIDR140DP-T1-GE3 - Power MOSFET, N Channel, 25 V, 100 A, 540 µohm, PowerPAK SO, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 100A
- Drain Source Voltage Vds: 25V
- On Resistance Rds(on): 0.00054ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 2.1V
- Power Dissipation Pd: 125W
- Transistor Case Style: PowerPAK SO
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Gen IV Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2019)