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Description
VISHAY - SI7850DP-T1-GE3 - Power MOSFET, N Channel, 60 V, 6.2 A, 0.018 ohm, PowerPAK SO, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 6.2A
- Drain Source Voltage Vds: 60V
- On Resistance Rds(on): 0.018ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 3V
- Power Dissipation Pd: 1.8W
- Transistor Case Style: PowerPAK SO
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (20-Jun-2016)