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Description
VISHAY - SI7456DP-T1-GE3 - Power MOSFET, N Channel, 100 V, 5.7 A, 0.021 ohm, PowerPAK SO, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 5.7A
- Drain Source Voltage Vds: 100V
- On Resistance Rds(on): 0.021ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 4V
- Power Dissipation Pd: 1.9W
- Transistor Case Style: PowerPAK SO
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jun-2015)
- Current Temperature: 25°C
- Device Marking: SI7456DP
- External Depth: 5.26mm
- External Length / Height: 1.2mm
- External Width: 6.2mm
- Full Power Rating Temperature: 25°C
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Junction to Case Thermal Resistance A: 1.8°C/W
- N-channel Gate Charge: 44nC
- Operating Temperature Min: -55°C
- Pulse Current Idm: 40A
