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Description
VISHAY - SI4497DY-T1-GE3 - Power MOSFET, P Channel, 30 V, 36 A, 0.0027 ohm, SOIC, Surface Mount
- Transistor Polarity: P Channel
- Continuous Drain Current Id: -36A
- Drain Source Voltage Vds: -30V
- On Resistance Rds(on): 0.0027ohm
- Rds(on) Test Voltage Vgs: -10V
- Threshold Voltage Vgs: -2.5V
- Power Dissipation Pd: 7.8W
- Transistor Case Style: SOIC
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (20-Jun-2016)