SI4100DY-T1-GE3 MOSFET, N-Ch, 100V, 6.8A, SO8 Vishay

VISHAYSKU: SI4100DY-T1-GE3 Order code: 1779251

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In stock (1917 units), ready to be shipped

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Description

VISHAY - SI4100DY-T1-GE3 - Power MOSFET, N Channel, 100 V, 6.8 A, 0.051 ohm, SOIC, Surface Mount

  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 6.8A
  • Drain Source Voltage Vds: 100V
  • On Resistance Rds(on): 0.051ohm
  • Rds(on) Test Voltage Vgs: 10V
  • Threshold Voltage Vgs: 2V
  • Power Dissipation Pd: 6W
  • Transistor Case Style: SOIC
  • No. of Pins: 8Pins
  • Operating Temperature Max: 150°C
  • Product Range: -
  • Automotive Qualification Standard: -
  • MSL: MSL 1 - Unlimited
  • Current Id Max: 6.8A
  • Operating Temperature Min: -55°C
  • Operating Temperature Range: -55°C to +150°C
  • Voltage Vgs Max: 20V

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