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Description
VISHAY - SI3552DV-T1-E3 - Dual MOSFET, Complementary N and P Channel, 30 V, 2.5 A, 0.085 ohm, TSOP, Surface Mount
- Transistor Polarity: N and P Channel
- Continuous Drain Current Id: 2.5A
- Drain Source Voltage Vds: 30V
- On Resistance Rds(on): 0.085ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 1V
- Power Dissipation Pd: 1.15W
- Transistor Case Style: TSOP
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (20-Jun-2016)