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Description
VISHAY - SI2302CDS-T1-GE3 - Power MOSFET, N Channel, 20 V, 2.9 A, 0.045 ohm, TO-236, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 2.9A
- Drain Source Voltage Vds: 20V
- On Resistance Rds(on): 0.045ohm
- Rds(on) Test Voltage Vgs: 8V
- Threshold Voltage Vgs: 850mV
- Power Dissipation Pd: 710mW
- Transistor Case Style: TO-236
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: No SVHC (15-Jun-2015)
- Current Id Max: 2.9A
- Junction Temperature Tj Max: 150°C
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Rise Time: 7ns
- Termination Type: Surface Mount Device
- Voltage Vds Typ: 20V
- Voltage Vgs Max: 850mV
- Voltage Vgs Rds on Measurement: 4.5V
- Voltage Vgs th Max: 0.85V
- Voltage Vgs th Min: 0.4V
