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Description
VISHAY - SI1926DL-T1-E3 - Dual MOSFET, N Channel, 60 V, 370 mA, 1.4 ohm, SOT-363, Surface Mount
- Transistor Polarity: Dual N Channel
- Continuous Drain Current Id: 370mA
- Drain Source Voltage Vds: 60V
- On Resistance Rds(on): 1.4ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 2.5V
- Power Dissipation Pd: 510mW
- Transistor Case Style: SOT-363
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (20-Jun-2016)