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SCTWA40N120G2V-4 - Silicon Carbide MOSFET, N Channel, 45 A, 1.2 kV, 0.07 ohm, HiP247LL - STMICROELECTRONICS
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SCTWA40N120G2V-4 - Silicon Carbide MOSFET, N Channel, 45 A, 1.2 kV, 0.07 ohm, HiP247LL - STMICROELECTRONICS

SCTWA40N120G2V-4 - Silicon Carbide MOSFET, N Channel, 45 A, 1.2 kV, 0.07 ohm, HiP247LL - STMICROELECTRONICS

STMICROELECTRONICSSKU: SCTWA40N120G2V-4 Order code: 3680099
Price:
€32,88

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Description

  • Channel Type: N Channel
  • Continuous Drain Current Id: 45A
  • Drain Source On State Resistance: 0.07ohm
  • Drain Source Voltage Vds: 1.2kV
  • Gate Source Threshold Voltage Max: -
  • MOSFET Module Configuration: -
  • No. of Pins: 4Pins
  • On Resistance Rds(on): 0.07ohm
  • Operating Temperature Max: 200°C
  • Power Dissipation: -
  • Power Dissipation Pd: -
  • Product Range: TrenchFET Gen II
  • Rds(on) Test Voltage: 18V
  • Transistor Case Style: HiP247LL
  • Transistor Polarity: N Channel

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