SCTW60N120G2 - Silicon Carbide MOSFET, Single, N Channel, 60 A, 1.2 kV, 0.035 ohm, HiP247 - STMICROELECTRONICS

STMICROELECTRONICSSKU: SCTW60N120G2 Order code: 3879171

Price:
Sale price€42,18

Tax included Shipping calculated at checkout

Stock:
In stock (36 units), ready to be shipped

Documenten en downloads

Description

  • Channel Type: N Channel
  • Continuous Drain Current Id: 60A
  • Drain Source On State Resistance: 0.035ohm
  • Drain Source Voltage Vds: 1.2kV
  • Gate Source Threshold Voltage Max: 3V
  • MOSFET Module Configuration: Single
  • No. of Pins: 3Pins
  • On Resistance Rds(on): 0.035ohm
  • Operating Temperature Max: 200°C
  • Power Dissipation: 389W
  • Power Dissipation Pd: 389W
  • Product Range: -
  • Rds(on) Test Voltage: 18V
  • Transistor Case Style: HiP247
  • Transistor Polarity: N Channel

Estimate shipping

You may also like