SCTW40N120G2V - Silicon Carbide MOSFET, Single, N Channel, 36 A, 1.2 kV, 0.07 ohm, HiP247 - STMICROELECTRONICS

STMICROELECTRONICSSKU: SCTW40N120G2V Order code: 3748722

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Sale price€30,33

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In stock (427 units), ready to be shipped

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Description

  • Channel Type: N Channel
  • Continuous Drain Current Id: 36A
  • Drain Source On State Resistance: 0.07ohm
  • Drain Source Voltage Vds: 1.2kV
  • Gate Source Threshold Voltage Max: 2.45V
  • MOSFET Module Configuration: Single
  • No. of Pins: 3Pins
  • On Resistance Rds(on): 0.07ohm
  • Operating Temperature Max: 200°C
  • Power Dissipation: 278W
  • Power Dissipation Pd: 278W
  • Product Range: -
  • Rds(on) Test Voltage: 18V
  • Transistor Case Style: HiP247
  • Transistor Polarity: N Channel

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