Documents et téléchargements
Description
NEXPERIA - PMBT2907A,215 - Bipolar (BJT) Single Transistor, General Purpose, PNP, 60 V, 600 mA, 250 mW, TO-236AB
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: -60V
- Transition Frequency ft: 200MHz
- Power Dissipation Pd: 250mW
- DC Collector Current: -600mA
- DC Current Gain hFE: 100hFE
- Transistor Case Style: TO-236AB
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- Collector Emitter Saturation Voltage Vce(on): 1.6V
- Continuous Collector Current Ic Max: 600mA
- Current Ic @ Vce Sat: 500mA
- Current Ic Continuous a Max: 600mA
- Current Ic hFE: 1mA
- Gain Bandwidth ft Typ: 200MHz
- Hfe Min: 100
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Peak Current Icm: 0.8A
- Power Dissipation Ptot Max: 250mW
- SMD Marking: 2F
- Termination Type: Surface Mount Device
