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Description
NEXPERIA - PBSS5480X,135 - Bipolar (BJT) Single Transistor, PNP, 80 V, 4 A, 550 mW, SOT-89, Surface Mount
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: -80V
- Transition Frequency ft: 125MHz
- Power Dissipation Pd: 550mW
- DC Collector Current: -4A
- DC Current Gain hFE: 300hFE
- Transistor Case Style: SOT-89
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): 55V
- Continuous Collector Current Ic Max: 4A
- Current Ic @ Vce Sat: 500A
- Current Ic Continuous a Max: 4A
- Current Ic hFE: 1A
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Typ: 125MHz
- Hfe Min: 180
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Power Dissipation Ptot Max: 1.3W
- SMD Marking: 1Z
- Voltage Vcbo: 80V