NVB190N65S3F - Power MOSFET, N Channel, 650 V, 20 A, 0.158 ohm, TO-263 (D2PAK), Surface Mount - ONSEMI

ONSEMISKU: NVB190N65S3F Order code: 3265483

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Sale price€7,05

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In stock (8 units), ready to be shipped

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Description

  • Automotive Qualification Standard: AEC-Q101
  • Channel Type: N Channel
  • Continuous Drain Current Id: 20A
  • Drain Source On State Resistance: 0.158ohm
  • Drain Source Voltage Vds: 650V
  • Gate Source Threshold Voltage Max: 5V
  • No. of Pins: 3Pins
  • On Resistance Rds(on): 0.158ohm
  • Operating Temperature Max: 150°C
  • Power Dissipation: 162W
  • Power Dissipation Pd: 162W
  • Product Range: SUPERFET III
  • Qualification: AEC-Q101
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: TO-263 (D2PAK)
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel

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