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Description
ONSEMI - MMBFJ309LT1G - JFET Transistor, JFET, -25 V, 30 mA, -4 V, SOT-23, 3 Pin, 150 °C
- Breakdown Voltage Vbr: -25V
- Zero Gate Voltage Drain Current Idss Min: 12mA
- Zero Gate Voltage Drain Current Idss Max: 30mA
- Gate-Source Cutoff Voltage Vgs(off) Max: -4V
- Transistor Case Style: SOT-23
- Transistor Type: JFET
- No. of Pins: 3 Pin
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Capacitance Ciss Max: 5pF
- Current Idss Max: 30mA
- Current Idss Min: 12mA
- Drain Source Voltage Vds: 25V
- No. of Pins: 3Pins
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 225mW
- Power Dissipation Ptot Max: 225mW
- SMD Marking: 6x
- Termination Type: Surface Mount Device
- Transistor Polarity: N Channel
- Voltage Vgs Off Min: -1V
- Zero Gate Voltage Drain Current Idss: 12mA to 30mA
