Description
ONSEMI - MJD32CT4G - Bipolar (BJT) Single Transistor, General Purpose, PNP, 100 V, 3 A, 15 W, TO-252 (DPAK)
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: -100V
- Transition Frequency ft: 3MHz
- Power Dissipation Pd: 15W
- DC Collector Current: -3A
- DC Current Gain hFE: 10hFE
- Transistor Case Style: TO-252
- No. of Pins: 4Pins
- Operating Temperature Max: 150°C
- Product Range: MJxxxx Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: Lead (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): 1.2V
- Complementary Device: MJD31CT4G
- Continuous Collector Current Ic Max: 3A
- Current Ic Continuous a Max: 3A
- Current Ic hFE: 3A
- Gain Bandwidth ft Typ: 3MHz
- Hfe Min: 10
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Peak Current Icm: 5A
- Termination Type: Surface Mount Device
- Voltage Vcbo: 100V
