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Description
ONSEMI - MJD210G - Bipolar (BJT) Single Transistor, PNP, 25 V, 5 A, 1.4 W, TO-252 (DPAK), Surface Mount
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: 25V
- Transition Frequency ft: 65MHz
- Power Dissipation Pd: 1.4W
- DC Collector Current: 5A
- DC Current Gain hFE: 3hFE
- Transistor Case Style: TO-252
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: Lead (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): 300mV
- Complementary Device: MJD200G
- Continuous Collector Current Ic Max: 5A
- Current Ic Continuous a Max: 5A
- Current Ic hFE: 5A
- Gain Bandwidth ft Typ: 65MHz
- Hfe Min: 10
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Peak Current Icm: 10A
- Power Dissipation Ptot Max: 12.5W
- Termination Type: Surface Mount Device
- Voltage Vcbo: 40V
