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Description
ONSEMI - MJD112T4G - Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 2 A, 20 W, TO-252 (DPAK), Surface Mount
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 100V
- Transition Frequency ft: 25MHz
- Power Dissipation Pd: 20W
- DC Collector Current: 2A
- DC Current Gain hFE: 12hFE
- Transistor Case Style: TO-252
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: Lead (27-Jun-2018)