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Description
ONSEMI - MJD112G - Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 2 A, 1.75 W, TO-252 (DPAK), Surface Mount
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 100V
- Transition Frequency ft: 25MHz
- Power Dissipation Pd: 1.75W
- DC Collector Current: 2A
- DC Current Gain hFE: 12000hFE
- Transistor Case Style: TO-252
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: Lead (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): 2V
- Complementary Device: MJD117G
- Continuous Collector Current Ic Max: 2A
- Current Ic Continuous a Max: 4A
- Current Ic hFE: 2A
- Gain Bandwidth ft Typ: 25MHz
- Hfe Min: 200
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Peak Current Icm: 4A
- Power Dissipation Ptot Max: 20W
- Termination Type: Surface Mount Device
- Voltage Vcbo: 100V
