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Description
IXYS SEMICONDUCTOR - IXTP4N80P - Power MOSFET, N Channel, 800 V, 4 A, 3 ohm, TO-220, Through Hole
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 4A
- Drain Source Voltage Vds: 800V
- On Resistance Rds(on): 3ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 5.5V
- Power Dissipation Pd: 100W
- Transistor Case Style: TO-220
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: No SVHC (12-Jan-2017)
- Capacitance Ciss Typ: 750pF
- Current Id Max: 3.6A
- Junction to Case Thermal Resistance A: 1.25°C/W
- N-channel Gate Charge: 15nC
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Reverse Recovery Time trr Max: 600ns
- Termination Type: Through Hole
- Voltage Vds Typ: 800V
- Voltage Vgs Max: 30V
- Voltage Vgs Rds on Measurement: 10V