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Description
IXYS SEMICONDUCTOR - IXTP3N120 - Power MOSFET, N Channel, 1.2 kV, 3 A, 4.5 ohm, TO-220, Through Hole
- Transistor Polarity: N Channel
 - Continuous Drain Current Id: 3A
 - Drain Source Voltage Vds: 1.2kV
 - On Resistance Rds(on): 4.5ohm
 - Rds(on) Test Voltage Vgs: 10V
 - Threshold Voltage Vgs: 5V
 - Power Dissipation Pd: 200W
 - Transistor Case Style: TO-220
 - No. of Pins: 3Pins
 - Operating Temperature Max: 150°C
 - Product Range: -
 - Automotive Qualification Standard: -
 - MSL: -
 - SVHC: No SVHC (12-Jan-2017)
 - Capacitance Ciss Typ: 1050pF
 - Current Id Max: 3A
 - Junction to Case Thermal Resistance A: 0.8°C/W
 - N-channel Gate Charge: 39nC
 - Operating Temperature Min: -55°C
 - Operating Temperature Range: -55°C to +150°C
 - Reverse Recovery Time trr Max: 700ns
 - Rise Time: 35ns
 - Termination Type: Through Hole
 - Voltage Vds Typ: 1.2kV
 - Voltage Vgs Max: 20V
 - Voltage Vgs Rds on Measurement: 10V
 
