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Description
IXYS SEMICONDUCTOR - IXFN200N10P - Power MOSFET, PolarFET, N Channel, 100 V, 200 A, 0.0075 ohm, ISOTOP, Module
- Transistor Polarity: N Channel
 - Continuous Drain Current Id: 200A
 - Drain Source Voltage Vds: 100V
 - On Resistance Rds(on): 0.0075ohm
 - Rds(on) Test Voltage Vgs: 15V
 - Threshold Voltage Vgs: 5V
 - Power Dissipation Pd: 680W
 - Transistor Case Style: ISOTOP
 - No. of Pins: 4Pins
 - Operating Temperature Max: 175°C
 - Product Range: Polar(TM) HiPerFET
 - Automotive Qualification Standard: -
 - MSL: -
 - SVHC: No SVHC (12-Jan-2017)
 - Capacitance Ciss Typ: 7600pF
 - Current Id Max: 200A
 - Junction to Case Thermal Resistance A: 0.22°C/W
 - N-channel Gate Charge: 235nC
 - Operating Temperature Min: -55°C
 - Operating Temperature Range: -55°C to +175°C
 - Reverse Recovery Time trr Max: 150ns
 - Termination Type: Screw
 - Voltage Vds Typ: 100V
 - Voltage Vgs Max: 20V
 - Voltage Vgs Rds on Measurement: 10V
 
