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Description
VISHAY - IRFBE30PBF - Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 4.1A
- Drain Source Voltage Vds: 800V
- On Resistance Rds(on): 3ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 4V
- Power Dissipation Pd: 125W
- Transistor Case Style: TO-220AB
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- Current Id Max: 4.1A
- Current Temperature: 25°C
- Full Power Rating Temperature: 25°C
- Junction to Case Thermal Resistance A: 2°C/W
- Lead Spacing: 2.54mm
- No. of Transistors: 1
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Pulse Current Idm: 16A
- Termination Type: Through Hole
- Voltage Vds Typ: 800V
- Voltage Vgs Max: 20V
- Voltage Vgs Rds on Measurement: 10V
