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Description
VISHAY - IRF620PBF - Power MOSFET, N Channel, 200 V, 5.2 A, 0.8 ohm, TO-220AB, Through Hole
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 5.2A
- Drain Source Voltage Vds: 200V
- On Resistance Rds(on): 0.8ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 4V
- Power Dissipation Pd: 50W
- Transistor Case Style: TO-220AB
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- Alternate Case Style: SOT-78B
- Avalanche Single Pulse Energy Eas: 160mJ
- Capacitance Ciss Typ: 350pF
- Current Id Max: 5.2A
- Current Temperature: 25°C
- Device Marking: IRF620
- Full Power Rating Temperature: 25°C
- Junction to Case Thermal Resistance A: 2.5°C/W
- Lead Spacing: 2.54mm
- No. of Transistors: 1
- On State resistance @ Vgs = 10V: 800mohm
- Operating Temperature Min: -55°C
- Pin Configuration: a
- Pin Format: 1G, (2+Tab)D, 3S
- Power Dissipation Ptot Max: 30W
- Pulse Current Idm: 18A
- Reverse Recovery Time trr Typ: 155ns
- Termination Type: Through Hole
- Voltage Vds Typ: 200V
- Voltage Vgs Max: 20V
- Voltage Vgs Rds on Measurement: 10V
