G3R350MT12D - Silicon Carbide MOSFET, Single, N Channel, 11 A, 1.2 kV, 0.35 ohm, TO-247 - GENESIC SEMICONDUCTOR

GENESIC SEMICONDUCTORSKU: G3R350MT12D Order code: 3598642

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In stock (10 units), ready to be shipped

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Description

  • Channel Type: N Channel
  • Continuous Drain Current Id: 11A
  • Drain Source On State Resistance: 0.35ohm
  • Drain Source Voltage Vds: 1.2kV
  • Gate Source Threshold Voltage Max: 2.69V
  • MOSFET Module Configuration: Single
  • No. of Pins: 3Pins
  • On Resistance Rds(on): 0.35ohm
  • Operating Temperature Max: 175°C
  • Power Dissipation: 74W
  • Power Dissipation Pd: 74W
  • Product Range: G3R
  • Rds(on) Test Voltage: 15V
  • Transistor Case Style: TO-247
  • Transistor Polarity: N Channel

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