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G2R1000MT17D - Silicon Carbide MOSFET, Single, N Channel, 4 A, 1.7 kV, 1 ohm, TO-247 - GENESIC SEMICONDUCTOR
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G2R1000MT17D - Silicon Carbide MOSFET, Single, N Channel, 4 A, 1.7 kV, 1 ohm, TO-247 - GENESIC SEMICONDUCTOR

G2R1000MT17D - Silicon Carbide MOSFET, Single, N Channel, 4 A, 1.7 kV, 1 ohm, TO-247 - GENESIC SEMICONDUCTOR

GENESIC SEMICONDUCTORSKU: G2R1000MT17D Order code: 3598643
Price:
€8,73

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Description

  • Channel Type: N Channel
  • Continuous Drain Current Id: 4A
  • Drain Source On State Resistance: 1ohm
  • Drain Source Voltage Vds: 1.7kV
  • Gate Source Threshold Voltage Max: 4V
  • MOSFET Module Configuration: Single
  • No. of Pins: 3Pins
  • On Resistance Rds(on): 1ohm
  • Operating Temperature Max: 175°C
  • Power Dissipation: 53W
  • Power Dissipation Pd: 53W
  • Product Range: G2R
  • Rds(on) Test Voltage: 20V
  • Transistor Case Style: TO-247
  • Transistor Polarity: N Channel

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