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Description
ONSEMI - FQB55N10 - Power MOSFET, N Channel, 100 V, 55 A, 0.026 ohm, TO-263 (D2PAK), Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 55A
- Drain Source Voltage Vds: 100V
- On Resistance Rds(on): 0.026ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 4V
- Power Dissipation Pd: 155W
- Transistor Case Style: TO-263
- No. of Pins: 3Pins
- Operating Temperature Max: 175°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- Alternate Case Style: D2-PAK
- Current Id Max: 55A
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation on 1" Sq. PCB: 3.75W
- Pulse Current Idm: 220A
- SMD Marking: FQB55N10
- Voltage Vds: 100V
- Voltage Vds Typ: 100V
- Voltage Vgs Max: 25V
- Voltage Vgs Rds on Measurement: 10V
- Voltage Vgs th Max: 4V
