Documents et téléchargements
Description
ONSEMI - FDC658AP - Power MOSFET, P Channel, 30 V, 4 A, 0.044 ohm, SuperSOT, Surface Mount
- Transistor Polarity: P Channel
- Continuous Drain Current Id: 4A
- Drain Source Voltage Vds: -30V
- On Resistance Rds(on): 0.044ohm
- Rds(on) Test Voltage Vgs: -10V
- Threshold Voltage Vgs: -1.8V
- Power Dissipation Pd: 1.6W
- Transistor Case Style: SuperSOT
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Current Id Max: -4A
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Termination Type: Surface Mount Device
- Voltage Vds: -30V
- Voltage Vds Typ: -30V
- Voltage Vgs Max: -25V
- Voltage Vgs Rds on Measurement: -10V
- Voltage Vgs th Max: -3V
