Documenten en downloads
Description
ONSEMI - BD237G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 2 A, 25 W, TO-225AA, Through Hole
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 80V
- Transition Frequency ft: 3MHz
- Power Dissipation Pd: 25W
- DC Collector Current: 2A
- DC Current Gain hFE: 3hFE
- Transistor Case Style: TO-225AA
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: No SVHC (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): 600mV
- Continuous Collector Current Ic Max: 2A
- Current Ic Continuous a Max: 2A
- Current Ic hFE: 1A
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Min: 3MHz
- Gain Bandwidth ft Typ: 3MHz
- Hfe Min: 25
- No. of Transistors: 1
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Ptot Max: 26W
- Voltage Vcbo: 100V
