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Description
ONSEMI - BC857BDW1T1G - Bipolar Transistor Array, General Purpose, PNP, -45 V, 100 mA, 380 mW, 150 hFE, SOT-363
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: -45V
- Power Dissipation Pd: 380mW
- DC Collector Current: 100mA
- DC Current Gain hFE: 150hFE
- Transistor Case Style: SOT-363
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: BCxxx Series
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): 220V
- Current Ic Continuous a Max: -100mA
- Gain Bandwidth ft Typ: 100MHz
- Hfe Min: 475
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Termination Type: Surface Mount Device
- Transistor Type: General Purpose
